PART |
Description |
Maker |
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C) From old datasheet system
|
Fuji Semiconductors, Inc.
|
VDI75-12S3 VID75-12S3 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 75A条一(c
|
Analog Devices, Inc.
|
F6-8R10KF |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 1KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块|全桥| 1KV交五(巴西)国际消费电子展| 8A条一(c
|
ECM Electronics, Ltd.
|
GP300LSS16S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|独立| 1.6KV五(巴西)国际消费电子展| 300我(丙)
|
TE Connectivity, Ltd.
|
MIG100Q6CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
CM100DY12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 100号A一(c
|
Mitsubishi Electric, Corp.
|
2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
CM200DU12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 200安培我(丙)
|
Powerex, Inc.
|
CM50DY28 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五(巴西)国际消费电子展| 50A条一(c
|
Mitsubishi Electric, Corp.
|